Efficient Near‐Infrared Luminescence in Lanthanide‐Doped Vacancy‐Ordered Double Perovskite Cs2ZrCl6 Phosphors via Te4+ Sensitization. (3rd May 2022)

• Record Type: Journal Article
• Authors: Sun, Jinyue; Zheng, Wei; Huang, Ping; Zhang, Meiran; Zhang, Wen; Deng, Zhonghua; Yu, Shaohua; Jin, Mengyao; Chen, Xueyuan
• Is Part Of: Angewandte Chemie. Volume 134:Number 26(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-05-03
• Subjects: Energy Transfer -- Lanthanide -- Metal Halide -- Near-Infrared Luminescence -- Tellurium; Chemistry -- Periodicals; 540
• DOI: 10.1002/ange.202201993
• Languages: English
• ISSNs: 0044-8249

Abstract

Abstract: All‐inorganic lead‐free perovskite‐derivative metal halides have shown great promise in optoelectronics, however, it remains challenging to realize efficient near‐infrared (NIR) luminescence in these materials. Herein, we report a novel strategy based on Te 4+ /Ln 3+ (Ln=Er, Nd, and Yb) co‐doping to achieve efficient NIR luminescence in vacancy‐ordered double perovskite Cs2 ZrCl6 phosphors, which are excitable by a low‐cost near‐ultraviolet light‐emitting diode (LED) chip. Through sensitization by the spin‐orbital allowed 1 S0 → 3 P1 transition of Te 4+, intense and multi‐wavelength NIR luminescence originating from the 4f→4f transitions of Er 3+, Nd 3+, and Yb 3+ was acquired, with a quantum yield of 6.1 % for the Er 3+ emission. These findings provide a general approach to achieve efficient NIR emission in lead‐free metal halides through ns 2 ‐metal and lanthanide ion co‐doping, thereby opening up a new avenue for exploring NIR‐emitting perovskite derivatives towards versatile applications such as NIR‐LEDs and bioimaging. Abstract : A new class of NIR emitters was developed based on tellurium and lanthanide co‐doped perovskite‐derivative Cs2 ZrCl6 phosphors. Through sensitization by the spin‐orbital allowed 1 S0 → 3 P1 transition of Te 4+, intense and multi‐wavelength NIR luminescence from Er 3+, Nd 3+, and Yb 3+ was achieved upon excitation with a near‐ultraviolet light‐emitting diode.