A review of recent developments in aluminum gallium oxide thin films and devices. Issue 4 (4th July 2022)

• Record Type: Journal Article
• Authors: Saikumar, Ashwin Kumar; Nehate, Shraddha Dhanraj; Sundaram, Kalpathy B.
• Is Part Of: Critical reviews in solid state & materials sciences. Volume 47:Issue 4(2022)
• Page Start: 538
• Page End: 569
• Publication Date: 2022-07-04
• Subjects: review -- aluminum gallium oxide -- AGO -- deposition -- properties -- applications -- optical devices -- power devices; Solid state physics -- Periodicals; Solids -- Periodicals; Materials -- Periodicals; 530.41
• DOI: 10.1080/10408436.2021.1922357
• Languages: English
• ISSNs: 1040-8436

Abstract

Abstract: Inspired by the success of gallium oxide as a wide bandgap semiconductor, aluminum gallium oxide films which possess higher bandgap values have been researched extensively. Higher bandgap values of AGO films have successfully expanded the potential range of applications. In this review, we thoroughly summarize the recent developments in AGO growth, properties, and applications. Deposition techniques and the influence of synthesis parameters on AGO film are examined. Properties of AGO are influenced by the growth techniques and parameters, which promote the AGO films to be employed in desired applications. Electrical properties, optical properties, and morphological studies are discussed in detail. Finally, summary and future perspectives are identified. GRAPHICAL ABSTRACT: