A Ballistic Transport Nanodevice Based on Graphene Nanoribbon FET by Enhanced Productivity for Both Low-Voltage and Radio-Frequency Scopes. (1st June 2022)

• Record Type: Journal Article
• Authors: Anvarifard, Mohammad K.; Ramezani, Zeinab; Ghoreishi, S. Amir
• Is Part Of: ECS journal of solid state science and technology. Volume 11:Number 6(2022)
• Publication Date: 2022-06-01
• Subjects: Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac77ba
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The top performance in both the low-voltage and radio frequency (RF) scopes has been nominated for an unique nanodevice made from a graphene nanoribbon with an extremely short gate length (7.5 nm) in this study. Two distinct material engineering options were used, yielding some interesting outcomes. Due to the use of an ultrascale GNRFET in this study, the band structure non-linearity in the Dirac point and the energy-position dependent effective mass model for dual material gate architectures were examined for the first time. The NEGF formalism is used to carry out both the low-voltage and RF research using a three-dimensional (3D) Poisson equation. Low-voltage high performance has been validated by monitoring the key parameters in the terms of on current (Ion ), off current (Ioff ), Ion to Ioff ratio, subthreshold swing, and drain induced barrier lowering (DIBL) for the proposed device as compared to other structures under the study. The RF performance is examined by evaluation of essential parameters in the cases of parasitic gate capacitance, intrinsic cut-off frequency, intrinsic delay time, and transconductance. Indeed, a device with a higher source side gate work function than it does on the drain side is proposed will shift the energy band from the device's half to the drain electrode, altering carrier outflow. In addition, the performance of non-linearity and RF intermodulation distortion has been analyzed for all devices under investigation in order to attain the best attitude toward the suggested device in comparison to the other devices under investigation in this work.