Cite
HARVARD Citation
Sumi, T. et al. (n.d.). Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas. Japanese journal of applied physics. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Sumi, T. et al. (n.d.). Homoepitaxial growth of a-plane GaN layers by reaction between Ga2O vapor and NH3 gas. Japanese journal of applied physics. p. . [Online].