P‐15: Student Poster: Charge Trap‐Based Synaptic Transistor Employing In‐Ga‐Zn‐O as Channel and Trap Layers for Bio‐Inspired Neuromorphic Computing. Issue 1 (28th June 2022)

• Record Type: Journal Article
• Authors: Park, Junhyeong; Jang, Yuseong; Lee, Jinkyu; Lee, Soo-Yeon
• Is Part Of: Digest of technical papers. Volume 53:Issue 1(2022)
• Page Start: 1092
• Page End: 1095
• Publication Date: 2022-06-28
• Subjects: Neuromorphic computing -- IGZO synapse device -- Charge trap‐based synapse device -- Synaptic transistor -- Synaptic behavior; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15690
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : In this paper, indium‐gallium‐zinc‐oxide (IGZO) based charge trap synaptic transistors with Al2 O3 /IGZO/Al2 O3 gate dielectric stacks were proposed. It was found that the annealing effect of the IGZO charge trap layer is one of the key parameters for an excellent memory window and program/erase operations without light stimuli. Synaptic behaviors such as excitatory post‐synaptic current (EPSC), inhibitory post‐synaptic current (IPSC), long‐term potentiation (LTP), and long‐term depression (LTD) are success‐fully implemented.