55‐3: Development of Low‐Temperature Metal Dry‐Etching Equipment via ECR Plasma Source. Issue 1 (28th June 2022)

• Record Type: Journal Article
• Authors: Kim, Chiwoo; Jung, Jae Hoon; Jang, Jin Nyoung; Lee, Jong Hwa; Jung, Kiro; Yoon, Ho-Won; Lee, Sangheon; Kim, Donghoon; Hong, Mun-Pyo; Kim, Sang-Gab; Jang, Soo Ouk
• Is Part Of: Digest of technical papers. Volume 53:Issue 1(2022)
• Page Start: 729
• Page End: 732
• Publication Date: 2022-06-28
• Subjects: Ag -- ITO -- Cu -- Dry Etching -- ECR Plasma; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15593
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : This paper presents the dry etching performance and expectation of highly conductive thin metal films that are hardly etched at low temperature with conventional plasma dry etching equipment. Dry etching is performed using a combination of H2 and HCl gases in a reactive ion etching system with low temperature susceptor and electron cyclotron resonance (ECR) plasma source. We could achieve high electron temperature enough to dissociate and ionize H and Cl radicals from H2 and HCl molecules.