9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c‐Axis Aligned Crystalline‐Oxide Semiconductor. Issue 1 (28th June 2022)

• Record Type: Journal Article
• Authors: Tsuda, Kazuki; Takahashi, Hironobu; Hamada, Toshiki; Saito, Satoru; Baba, Haruyuki; Takahashi, Masahiro; Obonai, Toshimitsu; Koezuka, Junichi; Kunitake, Hitoshi; Kobayashi, Daisuke; Tajima, Michio; Yamazaki, Shunpei
• Is Part Of: Digest of technical papers. Volume 53:Issue 1(2022)
• Page Start: 78
• Page End: 81
• Publication Date: 2022-06-28
• Subjects: Oxide semiconductor -- radioactive -- X-ray -- Radiation sensor; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15421
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We have investigated the total ionizing dose effect by X‐rays, which is a degradation mode of a single transistor, to find the radiation resistance of oxide semiconductor large scale integrated circuit. At 3000 Gy corresponding to the absorbed dose for 30 years in a space environment, or more specifically, on a geostationary orbit, an oxide semiconductor field‐effect transistor showed a negative drift in threshold voltage of less than 300m V and substantially no degradation in subthreshold slope and mobility. After 60 hours from the irradiation, approximately 40% of the threshold voltage variation was recovered.