20‐3: Invited Paper: BEOL‐Compatible Ferroelectric Field‐Effect Transistors with Atomic Layer Deposition of Oxide Semiconductor Channel Toward Monolithic 3D Integration. Issue 1 (28th June 2022)

• Record Type: Journal Article
• Authors: Lin, Zhiyu; Lin, Zehao; Wang, Ziheng; Si, Mengwei; Ye, Peide D.
• Is Part Of: Digest of technical papers. Volume 53:Issue 1(2022)
• Page Start: 221
• Page End: 224
• Publication Date: 2022-06-28
• Subjects: Oxide semiconductor -- ferroelectric field-effect transistor -- hafnium zirconium oxide -- atomic layer deposition; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15458
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : In this work, we report a BEOL‐compatible ferroelectric field‐effect transistor using oxide semiconductor as channel and ferroelectric hafnium zirconium oxide as gate insulator all grown by atomic layer deposition with a low thermal budget of 400°C, and meanwhile demonstrating well‐behaved ferroelectric characteristics.