Gate‐Defined Quantum Confinement in CVD 2D WS2 (Adv. Mater. 25/2022). Issue 25 (23rd June 2022)

• Record Type: Journal Article
• Authors: Lau, Chit Siong; Chee, Jing Yee; Cao, Liemao; Ooi, Zi‐En; Tong, Shi Wun; Bosman, Michel; Bussolotti, Fabio; Deng, Tianqi; Wu, Gang; Yang, Shuo‐Wang; Wang, Tong; Teo, Siew Lang; Wong, Calvin Pei Yu; Chai, Jian Wei; Chen, Li; Zhang, Zhong Ming; Ang, Kah‐Wee; Ang, Yee Sin; Goh, Kuan Eng Johnson
• Is Part Of: Advanced materials. Volume 34:Issue 25(2022)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2022-06-23
• Subjects: atomic layer deposition -- Coulomb blockade -- HfO 2 -- high‐ k dielectric -- transition metal dichalcogenides; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.202270189
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Quantum Dots In article 2103907, Kuan Eng Johnson Goh and co‐workers report electrostatically defined quantum dots in bilayer WS2 grown by chemical vapor deposition and capped by HfO2 dielectric using atomic layer deposition. This marks a key milestone in scalable approaches toward 2D‐semiconductor‐based quantum devices, which had hitherto only been demonstrated with micrometer‐sized exfoliated flakes.