P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS. Issue 1 (28th June 2022)

• Record Type: Journal Article
• Authors: Hosaka, Yasuharu; Obonai, Toshimitsu; Dobashi, Masayoshi; Nakayama, Tomonori; Shima, Yukinori; Ohno, Masakatsu; Yamazaki, Shunpei
• Is Part Of: Digest of technical papers. Volume 53:Issue 1(2022)
• Page Start: 1066
• Page End: 1069
• Publication Date: 2022-06-28
• Subjects: Intense NBITS -- oxide semiconductor -- IGZO -- gate insulator -- indium diffusion -- oxygen vacancy -- defect states; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15683
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : This work verifies the existence of more than one cause of NBTIS degradation of oxide semiconductor FETs by analyzing its time dependence. As defects in a gate insulator (GI) that cause NBTIS degradation, indium diffused into the GI also serves as hole trap defects besides the NBOHC defects proposed by Tsubuku et al.