9‐2: Oxide TFT behavior Under X‐Ray Irradiation in DXD Backplane. Issue 1 (28th June 2022)

• Record Type: Journal Article
• Authors: Chang, YounGyoung; Yi, Youngjin; Lee, Hanseok; Kim, JinPil; Kim, JungJune; Choi, Soyang; Jung, Jihwan; Lim, Yubeen; Park, Kwon-Shik; Kim, JeomJae
• Is Part Of: Digest of technical papers. Volume 53:Issue 1(2022)
• Page Start: 82
• Page End: 85
• Publication Date: 2022-06-28
• Subjects: Oxide -- IGZO -- DXD -- Sensor -- TFT -- X-ray -- Degradation -- Instability -- Hydrogen -- Oxygen vacancy; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.15422
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Recently, the digital X‐ray detector (DXD) technology requires high quality and high frame rate dynamic images, so efforts are being made to apply an oxide semiconductor (OS) thin film transistor (TFT) to the DXD backplane as a switching device instead of an amorphous Si (a‐Si) TFT. In order for the OS TFT to be used as a switching device of the X‐ray detector, it is necessary to study about the degradation parameters of the OS TFT under X‐ray irradiation. We confirmed that the threshold voltage (Vth ) of the InGaZnO (IGZO) TFTs shifted negatively without s‐factor degradation according to X‐ray exposure. To understand these characteristics, we evaluated the X‐ray degradation characteristics of various methods.