A single-atom vanadium-doped 2D semiconductor platform for attomolar-level molecular sensing. Issue 25 (24th May 2022)
- Record Type:
- Journal Article
- Title:
- A single-atom vanadium-doped 2D semiconductor platform for attomolar-level molecular sensing. Issue 25 (24th May 2022)
- Main Title:
- A single-atom vanadium-doped 2D semiconductor platform for attomolar-level molecular sensing
- Authors:
- Seo, Jihyung
Kim, Yongchul
Lee, Junghyun
Son, Eunbin
Jung, Min-Hyoung
Kim, Young-Min
Jeong, Hu Young
Lee, Geunsik
Park, Hyesung - Abstract:
- Abstract : Single-atom vanadium doping into 1T′ ReSe2 boosted diverse features of a 2D semiconductor-based SERS substrate developed as a practical LSPR-free SERS platform. Abstract : Semiconducting materials offer promising opportunities as ideal platforms for localized surface plasmon resonance (LSPR)-free surface-enhanced Raman spectroscopy (SERS)-based molecular detection. However, conventional semiconductor-based SERS substrates have various drawbacks that hinder their practical SERS application, including their low sensitivity, uniformity, reproducibility, and operational stability, and poor universal detection capability for diverse analytes. Herein, we present a facile and effective strategy for boosting various aspects of the SERS functionalities of a 2D semiconductor, 1T′ ReSe2, to develop a practical LSPR-free SERS platform. Upon single-atom vanadium doping, the 1T′ ReSe2 substrate exhibited strong coupling interaction and efficient photoinduced charge transfer resonance with probe molecules, leading to ultrahigh sensitivity with an attomolar detection limit. Moreover, the method employed for preparing the vanadium-doped ReSe2 SERS substrate, viz., liquid precursor-assisted chemical vapor deposition-based synthesis with substitutional doping, endowed it with outstanding uniformity and reproducibility. Moreover, the as-prepared substrate demonstrated excellent operational stability and universal detection capability owing to its side catalytic effect-free feature,Abstract : Single-atom vanadium doping into 1T′ ReSe2 boosted diverse features of a 2D semiconductor-based SERS substrate developed as a practical LSPR-free SERS platform. Abstract : Semiconducting materials offer promising opportunities as ideal platforms for localized surface plasmon resonance (LSPR)-free surface-enhanced Raman spectroscopy (SERS)-based molecular detection. However, conventional semiconductor-based SERS substrates have various drawbacks that hinder their practical SERS application, including their low sensitivity, uniformity, reproducibility, and operational stability, and poor universal detection capability for diverse analytes. Herein, we present a facile and effective strategy for boosting various aspects of the SERS functionalities of a 2D semiconductor, 1T′ ReSe2, to develop a practical LSPR-free SERS platform. Upon single-atom vanadium doping, the 1T′ ReSe2 substrate exhibited strong coupling interaction and efficient photoinduced charge transfer resonance with probe molecules, leading to ultrahigh sensitivity with an attomolar detection limit. Moreover, the method employed for preparing the vanadium-doped ReSe2 SERS substrate, viz., liquid precursor-assisted chemical vapor deposition-based synthesis with substitutional doping, endowed it with outstanding uniformity and reproducibility. Moreover, the as-prepared substrate demonstrated excellent operational stability and universal detection capability owing to its side catalytic effect-free feature, unique electronic structure, and strong interaction with analytes. … (more)
- Is Part Of:
- Journal of materials chemistry. Volume 10:Issue 25(2022)
- Journal:
- Journal of materials chemistry
- Issue:
- Volume 10:Issue 25(2022)
- Issue Display:
- Volume 10, Issue 25 (2022)
- Year:
- 2022
- Volume:
- 10
- Issue:
- 25
- Issue Sort Value:
- 2022-0010-0025-0000
- Page Start:
- 13298
- Page End:
- 13304
- Publication Date:
- 2022-05-24
- Subjects:
- Materials -- Research -- Periodicals
Chemistry, Analytic -- Periodicals
Environmental sciences -- Research -- Periodicals
543.0284 - Journal URLs:
- http://pubs.rsc.org/en/journals/journalissues/ta ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/d2ta01935c ↗
- Languages:
- English
- ISSNs:
- 2050-7488
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5012.205100
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 22115.xml