Hole capture cross section of the Al acceptor level in 4H-SiC. (June 2022)

• Record Type: Journal Article
• Authors: Kato, Masashi; Di, Jing; Ohkouchi, Yutaro; Mizuno, Taisuke; Ichimura, Masaya; Kojima, Kazutoshi
• Is Part Of: Materials today communications. Volume 31(2022)
• Publication Date: 2022-06
• Subjects: Silicon carbide -- Deep level -- Al -- Capture cross section; Materials science -- Periodicals; 620.11
• DOI: 10.1016/j.mtcomm.2022.103648
• Languages: English
• ISSNs: 2352-4928

Abstract

Abstract: We performed current deep level transient spectroscopy (I-DLTS) on Al-doped p-type 4H-SiC epilayers. The epilayers exhibited a peak at 100–120 K in the I-DLTS spectra. The correspondence of the deep-level concentrations with the net acceptor concentration implies that the peak originates from the Al acceptor level. The observed activation energy of the peak was low compared to the Al acceptor level reported by Hall measurements owing to the Poole-Frenkel effect. We estimated capture cross section σ for holes of the Al acceptor level at the peak temperature based on the I-DLTS peak height dependence on the injection pulse widths and analyzed the temperature dependence of σ for holes. Graphical Abstract: ga1 Highlights: We performed current deep level transient spectroscopy (I-DLTS) on Al-doped 4H-SiC. We observed I-DLTS peaks due to the Al acceptor level. We analyzed the hole capture cross section of the Al acceptor level at low temperature.