Intrinsic anomalous Hall effect in thin films of topological kagome ferromagnet Fe3Sn2. Issue 23 (6th June 2022)

• Record Type: Journal Article
• Authors: Khan, Kacho Imtiyaz Ali; Yadav, Ram Singh; Bangar, Himanshu; Kumar, Akash; Chowdhury, Niru; Muduli, Prasanta Kumar; Muduli, Pranaba Kishor
• Is Part Of: Nanoscale. Volume 14:Issue 23(2022)
• Page Start: 8484
• Page End: 8492
• Publication Date: 2022-06-06
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/d2nr00443g
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Schematic of kagome Fe3 Sn lattice and anomalous Hall resistivity ( ρ AHE xy ) vs . temperature ( T ) for the Pt and Ta seed layered Fe3 Sn2 thin films. Abstract : Fe3 Sn2, a kagome ferromagnet, is a potential quantum material with intriguing topological features. Despite substantial experimental work on the bulk single crystals, the thin film growth of Fe3 Sn2 remains relatively unexplored. Here, we investigate the effect of two different seed layers (Ta and Pt) on the growth of Fe3 Sn2 thin films. We demonstrate the growth of polycrystalline Fe3 Sn2 thin films on Si/SiO2 substrates by room temperature sputter deposition, followed by in situ annealing at 500 °C. Our structural and magnetic measurements indicate that a pure ferromagnetic phase is formed for the Pt/Fe3 Sn2 thin films with higher saturation magnetization of M s = 464 emu cc −1, while a mixed-phase (consisting of ferromagnetic, Fe3 Sn2 and antiferromagnetic, FeSn) is formed for the Ta/Fe3 Sn2 thin films with a lower M s of 240 emu cc −1 . The Pt/Fe3 Sn2 thin films also exhibit an anomalous Hall coefficient, R s ≈ 2.6 × 10 −10 Ω cm −1 G −1 at room temperature, which is two order of magnitude higher compared to 3d-transition metal ferromagnets. A non-zero temperature-independent anomalous Hall conductivity σ int xy = (23 ± 11) Ω −1 cm −1 indicates an intrinsic mechanism of anomalous Hall effect originating from Berry curvature. These results are important for realizing novel topological spintronic devices on a CMOS-compatible substrate.