Investigation of parameters of new MAPD-3NM silicon photomultipliers. (1st January 2022)

• Record Type: Journal Article
• Authors: Ahmadov, F.; Ahmadov, G.; Akbarov, R.; Aktag, A.; Budak, E.; Doganci, E.; Gurer, U.; Holik, M.; Kahraman, A.; Karaçali, H.; Lyubchyk, S.; Lyubchyk, A.; Lyubchyk, S.; Mammadli, A.; Mamedov, F.; Nuruyev, S.; Pridal, P.; Sadigov, A.; Sadygov, Z.; Urban, O.; Yilmaz, E.; Yilmaz, O.; Zich, J.
• Is Part Of: Journal of instrumentation. Volume 17:Number 1(2022)
• Publication Date: 2022-01-01
• Subjects: Gamma detectors -- Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs, CMOS imagers, etc.) -- Spectrometers -- Photon detectors for UV, visible and IR photons (gas) (gas-photocathodes, solid-photocathodes); Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/17/01/C01001
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.