Hysteresis-free MoS2 metal semiconductor field-effect transistors with van der Waals Schottky junction. (6th January 2021)

• Record Type: Journal Article
• Authors: Wan, Da; Wang, Qixia; Huang, Hao; Jiang, Bei; Chen, Chen; Yang, Zhenyu; Li, Guoli; Liu, Chuansheng; Liu, Xingqiang; Liao, Lei
• Is Part Of: Nanotechnology. Volume 32:Number 13(2021)
• Publication Date: 2021-01-06
• Subjects: hysteresis -- subthreshold swing -- metal semiconductor field-effect transistor -- van der Waals Schottky junction; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/abd2e8
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Hysteresis-free and steep subthreshold swing (SS) are essential for low-power reliable electronics. Herein, MoS2 metal semiconductor field-effect transistors are fabricated with GeSe/MoS2 van der Waals Schottky junction as a local gate, in which the rectification behavior of the heterojunction offers the modulation of channel carriers. The trap-free gate interface enables the hysteresis-free characteristics of the transistors, and promises an ideal SS of 64 mV/dec at room temperature. All the devices operate with a low threshold voltage less than −1 V with desirable saturation behavior. An OR logic gate is constructed with the dual-gated MoS2 transistors by varying the back and top gate voltage. The strategy present here is promising for the design of low-power digital electronics based on 2D materials.