High performance ionic-liquid-gated air doped diamond field-effect transistors. (8th January 2021)

• Record Type: Journal Article
• Authors: Hsu, Bo; Farid, Sidra; Averion-Puttrich, Joseph; Sumant, Anirudha V; Stroscio, Michael A; Dutta, Mitra
• Is Part Of: Nanotechnology. Volume 32:Number 13(2021)
• Publication Date: 2021-01-08
• Subjects: diamond -- FET -- ionic liquid -- high power; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/abd0b6
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We report successful fabrication of high performance ion-gated field-effect transistors (FETs) on hydrogenated diamond surface. Investigations on the hydrogen (H)-terminated diamond by Hall effect measurements shows Hall mobility as high as ∼200 cm 2 V −1 s −1 . In addition we demonstrate a rapid fabrication scheme for achieving stable high performance devices useful for determining optimal growth and fabrication conditions. We achieved H-termination using hydrogen plasma treatment with a sheet resistivity as low as ∼1.3 kΩ/sq. Conductivity through the FET channel is studied as a function of bias voltage on the liquid ion-gated electrode from −3.0 to 1.5 V. Stability of the H-terminated diamond surface was studied by varying the substrate temperature up to 350 °C. It was demonstrated that the sheet resistance and carrier densities remain stable over 3 weeks in ambient air atmosphere even at substrate temperatures up to 350 °C, whereas increasing temperature beyond this limit has effected hydrogenation. This study opens new avenues for carrying out fundamental research on diamond FET devices with ease of fabrication and high throughput.