Cadmium stannate conductive layer with high optical transmittance and tunable work function. (29th January 2021)

• Record Type: Journal Article
• Authors: Zhu, Ziyao; Du, Zhongming; Liu, Xiangxin; Zhang, Yufeng; Wu, Qiuchen; Lin, Xinlu
• Is Part Of: Materials research express. Volume 8:Number 1(2021)
• Publication Date: 2021-01-29
• Subjects: cadmium stannate -- magnetron sputtering -- phonon density of states -- x-ray photoelectron spectroscopy; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/abdcbb
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: 200 nm cadmium stannate (Cd2 SnO4 ) transparent conductive layer films with a sheet resistance of 6.35 Ω/sq and resistivity of 1.27 × 10 −4 Ω · cm are deposited by magnetron sputtering coupling with adjustable target bias voltage followed by 620 °C 30 min annealing. The lowest resistivity of Cd2 SnO4 films reported before was 1.28 × 10 −4 Ω · cm, achieved with 510 nm Cd2 SnO4 . The average transmission rate of 200 nm sputtering Cd2 SnO4 films between 400–800 nm is 94%. The deposition rate increase target bias voltage can the and electrical performance of Cd2 SnO4 films. The surface work function of Cd2 SnO4 films is also tunable by target bias voltage. The Cd2 SnO4 phonon spectrum and phonon density of states combined with Raman microscope shows the Cd2 SnO4 films with most ideal electric properties has a identical phonon response. XPS shows the chemical component of as-deposited Cd2 SnO4 films and Cd2 SnO4 films after annealing with 120 V target bias voltage is Cd2.03 SnO6.36 and Cd1.25 SnO4.15, respectively, which is contrary to the general conclusions that interstitial cadmium atoms and oxygen vacancies are the main self-doping defects in Cd2 SnO4 films.