Cite
HARVARD Citation
You, S. et al. (2021). GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and VT instability effect. Semiconductor science and technology. p. . [Online].
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You, S. et al. (2021). GaN power IC design using the MIT virtual source GaNFET compact model with gate leakage and VT instability effect. Semiconductor science and technology. p. . [Online].