Influences of hydrogen ion irradiation on NcVsi− formation in 4H-silicon carbide. (28th January 2021)

• Record Type: Journal Article
• Authors: Narahara, Takuma; Sato, Shin-ichiro; Kojima, Kazutoshi; Hijikata, Yasuto; Ohshima, Takeshi
• Is Part Of: Applied physics express. Volume 14:Number 2(2021)
• Publication Date: 2021-01-28
• Subjects: silicon carbide -- Near Infrared Photoluminescence -- Nitrogen-Vacancy Centers in SiC -- radiation induced defects -- Quantum Technology; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abdc9e
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Nitrogen-vacancy (NC VSi − ) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on NC VSi − center formation in N-doped 4H-SiCs by hydrogen ion irradiation and subsequent thermal annealing. It is revealed photoluminescence for NC VSi − centers suddenly appears above the fluence of 5.0 × 10 15 cm −2 when annealed at 1000 °C. Appearance of a threshold fluence for their formation and/or activation has not been observed for other energetic particle irradiations. The possible mechanism is discussed based on the kinetics of hydrogen-related complexes and the majority carrier depletion caused by irradiation induced damage.