Cite
HARVARD Citation
Sahoo, J. et al. (2021). An electronically programmable Off-State breakdown voltage in LDMOS transistor with dual-dummy-gate for high voltage ESD protection. Microelectronics journal. p. . [Online].
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Sahoo, J. et al. (2021). An electronically programmable Off-State breakdown voltage in LDMOS transistor with dual-dummy-gate for high voltage ESD protection. Microelectronics journal. p. . [Online].