Cite
HARVARD Citation
Song, X. et al. (2022). A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics. Journal of physics. p. . [Online].
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Song, X. et al. (2022). A high-voltage GaN quasi-vertical metal–insulator–semiconductor Schottky barrier diode on Si with excellent temperature characteristics. Journal of physics. p. . [Online].