Simply equipped ε-Ga2O3 film/ZnO nanoparticle heterojunction for self-powered deep UV sensor. (1st January 2022)

• Record Type: Journal Article
• Authors: Mei, Tong; Li, Shan; Zhang, Shaohui; Liu, Yuanyuan; Li, Peigang
• Is Part Of: Physica scripta. Volume 97:Number 1(2022)
• Publication Date: 2022-01-01
• Subjects: heterojunction -- deep UV photodetector -- self-powered; Physics -- Periodicals; 530.05
• DOI: 10.1088/1402-4896/ac476e
• Languages: English
• ISSNs: 0031-8949

Abstract

Abstract: In this paper, a ε -Ga2 O3 film/ZnO nanoparticle hybrid heterojunction deep ultraviolet (UV) photodetector is described for 254 nm wavelength sensing application. The constructed ε -Ga2 O3 /ZnO heterojunction photodetector can operate in dual modes which are power supply mode and self-powered mode. Under reverse 5 V bias with 254 nm light intensity of 500 μ W cm −2, the photoresponsivity, specific detectivity and external quantum efficiency are 59.7 mA W −1, 7.83 × 10 12 Jones and 29.2%. At zero bias, the advanced ε -Ga2 O3 /ZnO photodetector performs decent self-powered photoelectrical properties with photo-to-dark current ratio of 1.28 × 10 5, on/off switching ratio of 3.22 × 10 4, rise/decay times of 523.1/31.7 ms, responsivity of 4.12 mA W −1 and detectivity of 2.24 × 10 12 Jones. The prominent photodetection performance lays a solid foundation for ε -Ga2 O3 /ZnO heterojunction in deep UV sensor application.