Microsecond non-melt UV laser annealing for future 3D-stacked CMOS. (1st June 2022)

• Record Type: Journal Article
• Authors: Tabata, Toshiyuki; Rozé, Fabien; Thuries, Louis; Halty, Sebastien; Raynal, Pierre-Edouard; Huet, Karim; Mazzamuto, Fulvio; Joshi, Abhijeet; Basol, Bulent M.; Alba, Pablo Acosta; Kerdilès, Sébastien
• Is Part Of: Applied physics express. Volume 15:Number 6(2022)
• Publication Date: 2022-06-01
• Subjects: laser anneal -- dopant activation -- process simulation -- differential Hall effect metrology; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac6e2a
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the process timescale typically from nanoseconds (ns) to microseconds ( μ s) strongly limit the vertical heat diffusion. In this work, μ s UV-LA solid phase epitaxial regrowth demonstrated an active carrier concentration surpassing 1 × 10 21 at cm −3 in an arsenic ion-implanted silicon-on-insulator substrate. After the subsequent ns UV-LA known for improving CMOS interconnect, only a slight (∼5%) sheet resistance increase was observed. The results open a possibility to integrate UV-LA at different stages of 3D-stacked CMOS.