Scintillation properties of Yb-doped Bi4Ge3O12 single crystals emitting near-infrared luminescence. (1st June 2022)

• Record Type: Journal Article
• Authors: Okazaki, Kai; Fukushima, Hiroyuki; Nakauchi, Daisuke; Kato, Takumi; Kawaguchi, Noriaki; Yanagida, Takayuki
• Is Part Of: Japanese journal of applied physics. Volume 61:Number 6(2022)
• Publication Date: 2022-06-01
• Subjects: radiation detection -- scintillation detector -- scintillator -- x-ray detection; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac6c13
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: Yb-doped Bi4 Ge3 O12 (BGO) single crystals with different dopant concentrations were synthesized by the floating zone method, and the photoluminescence (PL) and scintillation properties in visible to near-infrared (NIR) wavelength ranges were evaluated. In PL and scintillation, a broad emission band was observed at 400–600 nm, which was ascribed to the electronic transitions of Bi 3+ . Furthermore, NIR emission bands due to Yb 3+ were observed at 1000 nm. To evaluate scintillation detector properties, the relationship between emission intensity in the NIR range and X-ray exposure dose rate was investigated. Among the present samples, 0.5 and 1% Yb-doped BGO showed good linearity in the dynamic range from 0.006 to 60 Gy h −1 .