Cite
HARVARD Citation
Jeong, Y. et al. (2022). Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy. Applied physics express. p. . [Online].
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Jeong, Y. et al. (2022). Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy. Applied physics express. p. . [Online].