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HARVARD Citation
Zhang, Y. et al. (2022). A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect. Semiconductor science and technology. p. . [Online].
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Zhang, Y. et al. (2022). A novel 3.3 kV 4H-SiC trench PiN with enhanced conductance modulation effect. Semiconductor science and technology. p. . [Online].