Study of neutron irradiation effects in Depleted CMOS detector structures. (1st March 2022)

• Record Type: Journal Article
• Authors: Mandić, I.; Cindro, V.; Debevc, J.; Gorišek, A.; Hiti, B.; Kramberger, G.; Skomina, P.; Zavrtanik, M.; Mikuž, M.; Vilella, E.; Zhang, C.; Powell, S.; Franks, M.; Marco-Hernandez, R.; Steininger, H.
• Is Part Of: Journal of instrumentation. Volume 17:Number 3(2022)
• Publication Date: 2022-03-01
• Subjects: Particle tracking detectors (Solid-state detectors) -- Si microstrip and pad detectors -- Solid state detectors; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/17/03/P03030
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 kΩcm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2·10 15 neq /cm 2 . The depletion depth was measured with Edge-TCT. The effective space charge concentration Neff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of Neff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of Neff and detector current up to 1280 minutes at 60°C was made. It was found that Neff and current in reverse biased detector behave as expected for irradiated silicon.