Cite
HARVARD Citation
Maeda, R. et al. (2022). AlN/Al0.5Ga0.5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering. Applied physics express. p. . [Online].
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Maeda, R. et al. (2022). AlN/Al0.5Ga0.5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering. Applied physics express. p. . [Online].