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HARVARD Citation
Chen, D. et al. (2022). Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. Semiconductor science and technology. p. . [Online].
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Chen, D. et al. (2022). Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance. Semiconductor science and technology. p. . [Online].