Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology. (1st February 2022)

• Record Type: Journal Article
• Authors: Iacobucci, G.; Paolozzi, L.; Valerio, P.; Moretti, T.; Cadoux, F.; Cardarelli, R.; Cardella, R.; Débieux, S.; Favre, Y.; Ferrere, D.; Gonzalez-Sevilla, S.; Gurimskaya, Y.; Kotitsa, R.; Magliocca, C.; Martinelli, F.; Milanesio, M.; Münker, M.; Nessi, M.; Picardi, A.; Saidi, J.; Rücker, H.; Vicente Barreto Pinto, M.; Zambito, S.
• Is Part Of: Journal of instrumentation. Volume 17:Number 2(2022)
• Publication Date: 2022-02-01
• Subjects: Instrumentation and methods for time-of-flight (TOF) spectroscopy -- Particle tracking detectors -- Particle tracking detectors (Solid-state detectors) -- Timing detectors; Scientific apparatus and instruments -- Periodicals; 502.84
• DOI: 10.1088/1748-0221/17/02/P02019
• Languages: English
• ISSNs: 1748-0221

Abstract

Abstract: A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 μm. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of (99.9-0.2 +0.1 )% was measured together with a time resolution of (36.4 ± 0.8) ps at the highest preamplifier bias current working point of 150 μA and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.