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HARVARD Citation
Kagawa, R. et al. (2022). AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process. Applied physics express. p. . [Online].
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Kagawa, R. et al. (2022). AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process. Applied physics express. p. . [Online].