Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM. (1st March 2022)

• Record Type: Journal Article
• Authors: Li, Jiaping; Zhou, Xin; Xu, Liu; Wang, Jiale; Wu, Binhe; Wang, Chunrui
• Is Part Of: Materials research express. Volume 9:Number 3(2022)
• Publication Date: 2022-03-01
• Subjects: drop-coating -- vanadium dioxide nanorods -- MOS structures -- bipolar resistive switching -- RRAM; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ac565e
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes. Here, we demonstrate the direct fabrication of metal/oxides/semiconductor (MOS) structured Ag/VO2 (B)/SiOx /n ++ Si RRAM via drop-coating process, in which bipolar resistive switching behavior was obtained and investigated systematically. The RRAM devices exhibit good cycle-to-cycle endurance (>30 cycles) and high on/off ratio (>60). The switching mechanism is proposed to form Ag conducting filaments via VO2 (B) nanorods' guide by comparing the resistive switching behavior of Ag/SiOx /n ++ Si, Ag/VO2 (B)/n ++ Si, Ag/VO2 (B)/SiOx /n ++ Si devices and the corresponding SEM images before and after the application of electric field, which is confirmed by introducing NaCl barrier layer in Ag/VO2 (B)-NaCl/SiOx /n ++ Si devices. The present study may pave a convenient route for fabricating the ultrahigh density resistive memory devices without the aid of complex fabrication techniques, as well as provide a new potential material system for RRAM.