Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown AlxGa1–xAs/AlyGa1–yAs heterostructure with optical and electron beam pumping. (1st April 2022)

• Record Type: Journal Article
• Authors: Butaev, M.R.; Skasyrsky, Ya.K.; Kozlovsky, V.I.; Andreev, A.Yu.; Yarotskaya, I.V.; Marmalyuk, A.A.
• Is Part Of: Quantum electronics. Volume 52:Number 4(2022)
• Page Start: 362
• Page End: 366
• Publication Date: 2022-04-01
• Subjects: semiconductor disk laser -- AlxGa1-xAs/AlyGa1-yAs structure -- quantum well -- electron beam -- optical pumping -- MOCVD; Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL18017
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: A pulsed semiconductor disk laser based on the Al x Ga1 – x As/Al y Ga1 – y As structure with resonantly periodic gain and a built-in Bragg mirror emitting at a wavelength near 780 nm is studied. The laser characteristics are presented both for pumping by an electron beam and for optical pumping by laser diode radiation with a wavelength of 450 nm. Under pumping by an electron beam, a peak power of 4.4 W is achieved with a slope efficiency of over 10 %, while under optical pumping, the power is 0.2 W with a slope efficiency of 2.2 % and approximately the same cavity parameters. Possible reasons for the lower powers and efficiency under optical pumping are discussed.