IGZO synaptic thin-film transistors with embedded AlOx charge-trapping layers. (1st June 2022)

• Record Type: Journal Article
• Authors: Lee, Yeojin; Jo, Hyerin; Kim, Kooktae; Yoo, Hyobin; Baek, Hyeonjun; Lee, Dong Ryeol; Oh, Hongseok
• Is Part Of: Applied physics express. Volume 15:Number 6(2022)
• Publication Date: 2022-06-01
• Subjects: synaptic transistors -- IGZO -- AlOx -- thin film transistors -- RF magnetron sputtering; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac7032
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report the fabrication and characterization of indium gallium zinc oxide (IGZO)-based synaptic thin-film transistors. Radio-frequency magnetron-sputtered AlO x thin films are embedded in the IGZO channel as charge-trapping layers to provide synaptic behavior. The voltage pulse introduced at the gate electrodes traps or de-traps charges in the embedded AlO x layer thus modulates the channel current, which in turn leads to the ability to mimic biological synaptic behaviors such as excitonic postsynaptic current, paired-pulse facilitation, and potentiation and depression. Simulation results suggest that the device can perform properly as a synaptic unit in an artificial neural network.