Cite
HARVARD Citation
Chen, S. et al. (2022). A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction. Nanotechnology. p. . [Online].
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Chen, S. et al. (2022). A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction. Nanotechnology. p. . [Online].