GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion. (1st May 2022)

• Record Type: Journal Article
• Authors: Yokoyama, Naoki; Tanabe, Ryo; Yasuda, Yuma; Honda, Hiroto; Ichikawa, Shuhei; Fujiwara, Yasufumi; Hikosaka, Toshiki; Uemukai, Masahiro; Tanikawa, Tomoyuki; Katayama, Ryuji
• Is Part Of: Japanese journal of applied physics. Volume 61:Number 5(2022)
• Publication Date: 2022-05-01
• Subjects: Nitride Semiconductors -- Wavelength Conversion -- ICP-RIE -- Surface Activated Bonding; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac57ab
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: We proposed a nitride semiconductor transverse quasi-phase-matched wavelength conversion device with a polarity inverted structure along the vertical direction formed by surface-activated bonding and etching processes. Inductively coupled plasma etching of a GaN layer with maintaining a root mean square roughness of less than 2 nm in a 100 μ m square area was achieved even after deep etching of 1 μ m using Cl2 /Ar mixture gas and optimizing the antenna and bias powers. This smooth etching enabled surface-activated bonding of the ultrathin GaN layer with designed thickness. The fabrication process of the GaN polarity inverted channel waveguide was established.