Cite
HARVARD Citation
Li, Q. et al. (2021). Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors. Advanced theory and simulations. 4 (2), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Li, Q. et al. (2021). Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors. Advanced theory and simulations. 4 (2), p. n/a. [Online].