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HARVARD Citation
Rathkanthiwar, S. et al. (2022). Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices. Applied physics express. p. . [Online].
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Rathkanthiwar, S. et al. (2022). Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices. Applied physics express. p. . [Online].