Electrochemical Potentiostatic Activation for the Improvement of 270 nm AlGaN-Based UV-C Light-Emitting Diodes. (1st February 2022)

• Record Type: Journal Article
• Authors: Lee, Koh Eun; Choi, Rak Jun; Kang, Hyunwoong; Shim, Jong In; Ryu, Sang-Wan; Cho, Jaehee; Lee, June Key
• Is Part Of: ECS journal of solid state science and technology. Volume 11:Number 2(2022)
• Publication Date: 2022-02-01
• Subjects: electrochemical potentiostatic activation -- ultraviolet -- light emitting diode -- p-GaN, hole concentration, internal quantum efficiency; Solid state chemistry -- Periodicals; Electronics -- Materials -- Periodicals; Electrochemistry -- Periodicals; 541.0421
• DOI: 10.1149/2162-8777/ac53f8
• Languages: English
• ISSNs: 2162-8777

Abstract

Abstract : The electrochemical potentiostatic activation (EPA) method was performed by removing hydrogen atoms from the inside of the Mg-doped p -GaN/ p -AlGaN multilayer of 270 nm AlGaN-based UV-C light-emitting diodes (UV-C LEDs). The EPA evaluation was controlled among the applied voltages of 2, 3, and 4 V for 10 min under 1.0 M HCl solution, and the hole concentration inside the p -GaN/ p -AlGaN multilayer was decreased. To evaluate the characteristics and reliability of UV-C LEDs, the basic flip chip process was applied and then mounted on the AlN ceramic package by AuSn eutectic bonding. Compared to the as-fabricated LED, we demonstrated an increase of over 8% in light output power at 350 mA in UV-C LEDs by improving internal quantum efficiency (IQE) with EPA treatment at 3 V. The enhanced IQE and higher EQE contributed to improving the reliability of the LEDs, thus resulting in a ∼7% lifetime extension.