Cite
HARVARD Citation
Lee, S. et al. (2019). Complementary Schottky diode formation with carbon buffer and p-doped single layer graphene on intrinsic SiC via fluorine intercalation. Carbon. pp. 254-260. [Online].
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Lee, S. et al. (2019). Complementary Schottky diode formation with carbon buffer and p-doped single layer graphene on intrinsic SiC via fluorine intercalation. Carbon. pp. 254-260. [Online].