Flexible Electronics: Investigation of Nano‐Gaps in Fractured β‐Ga2O3 Nanomembranes Formed by Uniaxial Strain (Adv. Electron. Mater. 2/2021). (15th February 2021)

• Record Type: Journal Article
• Authors: Hasan, Md Nazmul; Lai, Junyu; Swinnich, Edward; Zheng, Yixiong; Baboukani, Behnoosh Sattari; Nalam, Prathima C.; Seo, Jung‐Hun
• Is Part Of: Advanced Electronic Materials. Volume 7:Number 2(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-02-15
• Subjects: Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.202170006
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : β‐Ga2 O3 nanomembranes are a quasi‐two‐dimensional form of bulk β‐Ga2 O3 . In article number 2000763, Jung‐Hun Seo and co‐workers present a systematical investigation of the layer delaminations and fractures in β‐Ga2 O3 nanomembrane under strain. The performance degradation is recovered by a water vapor treatment, meaning that this result provides a viable route for utilizing β‐Ga2 O3 nanomembrane as a material for future high‐performance flexible electronics.