Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C5 Crystals Embedded in C8‐BTBT Thin Film. (6th January 2021)
- Record Type:
- Journal Article
- Title:
- Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C5 Crystals Embedded in C8‐BTBT Thin Film. (6th January 2021)
- Main Title:
- Anomalous Current Decrease Under Illumination in Ambipolar Phototransistors Based on PTCDI‐C5 Crystals Embedded in C8‐BTBT Thin Film
- Authors:
- Tarsoly, Gergely
Choi, Youngill
You, Young Gyu
Jhang, Sung Ho
Pyo, Seungmoon - Abstract:
- Abstract: Most organic thin film‐based phototransistors exhibit an increase in current under illumination owing to the trapped photogenerated minority charge carriers, which enhance the accumulation of majority carriers in the semiconductor layer of the device. Recent research reveals that, on employing a unique active layer structure, phototransistor devices exhibit abnormal photoresponse behaviors under certain conditions: hole‐dominated current decreases under illumination and shows an anomalous dependence on irradiance. The current decreases with increasing irradiance. When the irradiance is increased further, a moderate current increase is observed. Under a constant negative bias, when a discrete light pulse is turned on, the current decreases sharply and then slowly increases to saturation in the beginning and it starts to increase when illumination is ceased. These anomalies are analyzed, and the changes in current are modeled using a mathematical model based on the simultaneous trapping and release of both photogenerated holes and electrons. Abstract : A phototransistor with organic semiconductor layer composed of crystal‐array embedded in thin film exhibits anomalous current drop under negative bias with non‐monotonic irradiance dependence. A discrete light pulse induces a sharp current decrease followed by a subsequent increase. The anomalous photoresponse is found to be the result of simultaneous trapping and release of photogenerated holes and electrons.
- Is Part Of:
- Advanced Electronic Materials. Volume 7:Number 2(2021)
- Journal:
- Advanced Electronic Materials
- Issue:
- Volume 7:Number 2(2021)
- Issue Display:
- Volume 7, Issue 2 (2021)
- Year:
- 2021
- Volume:
- 7
- Issue:
- 2
- Issue Sort Value:
- 2021-0007-0002-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-01-06
- Subjects:
- charge trapping -- organic field‐effect transistors -- organic phototransistors -- organic semiconductors -- photogating -- photogenerated charge carriers -- polymer gate dielectrics
Materials -- Electric properties -- Periodicals
Materials science -- Periodicals
Magnetic materials -- Periodicals
Electronic apparatus and appliances -- Periodicals
537 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2199-160X ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/aelm.202000973 ↗
- Languages:
- English
- ISSNs:
- 2199-160X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.848400
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 21912.xml