Cite
HARVARD Citation
Ding, K. et al. (2020). High‐Performance BeMgZnO/ZnO Heterostructure Field‐Effect Transistors. Physica status solidi. 14 (12), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Ding, K. et al. (2020). High‐Performance BeMgZnO/ZnO Heterostructure Field‐Effect Transistors. Physica status solidi. 14 (12), p. n/a. [Online].