Dramatically enhanced photoelectrochemical properties and transformed p/n type of g-C3N4 caused by K and I co-doping. (20th February 2019)

• Record Type: Journal Article
• Authors: Jing, Jiangping; Chen, Zhuoyuan; Feng, Chang
• Is Part Of: Electrochimica acta. Volume 297(2019)
• Page Start: 488
• Page End: 496
• Publication Date: 2019-02-20
• Subjects: Graphitic carbon nitride -- p/n type -- Fermi level -- K&I co-doping -- Photoelectrochemical performance; Electrochemistry -- Periodicals; Electrochemistry, Industrial -- Periodicals; 541.37
• DOI: 10.1016/j.electacta.2018.12.015
• Languages: English
• ISSNs: 0013-4686

Abstract

Abstract: Graphitic carbon nitride (g-C3 N4 ) usually shows amphoteric property in a neutral solution. In this work, a K&I co-doped g-C3 N4 is prepared by simply sintering the mixture of dicyandiamine, KI and I2 . The K&I co-doping modulates the band structure of g-C3 N4 with pulling the Fermi level toward its conduction band minimum. The obtained K&I co-doped g-C3 N4 (K&I-C3 N4 ) generates positive photocurrents over the whole investigated potential range, exhibiting a typical n-type semiconductor characteristic. Therefore, the K&I co-doping transforms the g-C3 N4 from amphoteric to n-type semiconductor. Also, the prepared K&I-C3 N4 shows widened light absorption range and enhanced separation efficiency of the photogenerated charge carriers, which results in the dramatically enhanced photoelectrochemical performance. Highlights: A K&I co-doped g-C3 N4 (K&I-C3 N4 ) with an evident n-type characteristic was prepared. The K&I co-doping pulled the Fermi level of g-C3 N4 toward its conduction band. K&I-C3 N4 generated positive photocurrents over whole investigated potential range. The K&I co-doping increased the electrical conductivity of g-C3 N4 . K&I-C3 N4 showed dramatically enhanced photoelectrochemical performance.