Effect of post-annealing on the significant photoresponsivity enhancement of BaSi2 epitaxial films on Si(111). (27th January 2021)

• Record Type: Journal Article
• Authors: Haku, Yurika; Aonuki, Sho; Yamashita, Yudai; Toko, Kaoru; Suemasu, Takashi
• Is Part Of: Applied physics express. Volume 14:Number 2(2021)
• Publication Date: 2021-01-27
• Subjects: photoresponsivity -- solar cell -- post annealing -- barium disilicide; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/abdc9f
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We demonstrated the marked photoresponsivity enhancement of BaSi2 epitaxial films by 5 min post-annealing at 850 °C–1000 °C in contrast to those at 600 °C–800 °C. Post-annealing at 1000 °C increased the photoresponsivity up to 9.0 A W −1 at a wavelength of around 800 nm under a bias voltage of 0.5 V applied between the top and bottom electrodes. The hole concentration decreased monotonously with annealing temperature from 8.3 × 10 16 to 5.4 × 10 15 cm –3, and the mobility exceeded 1000 cm 2 V –1 s –1 . The a -axis orientation of the BaSi2 films was significantly deteriorated at temperatures higher than 800 °C.