Cite
HARVARD Citation
Wang, F. et al. (2021). A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology. Semiconductor science and technology. p. . [Online].
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Wang, F. et al. (2021). A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology. Semiconductor science and technology. p. . [Online].