Effect of transition metals doping on electronic structure and optical properties of β-Ga2O3. (12th February 2021)

• Record Type: Journal Article
• Authors: Gao, Shanshan; Li, Weixue; Dai, Jianfeng; Wang, Qing; Suo, Zhongqiang
• Is Part Of: Materials research express. Volume 8:Number 2(2021)
• Publication Date: 2021-02-12
• Subjects: first-principles calculation -- electronic structure -- optical properties -- Ga2O3 -- effective mass; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/abde10
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: The effects of transition metal (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Zn) doping on the stability, electronic structure and optical properties of β -Ga2 O3 have been studied using GGA and GGA + U. The results show that the U value can correct the strong interaction of the d-layer, causing orbital hybridization and affecting the position and number of impurity energy levels. It can move the conduction band to higher energy levels and weaken the role of Ga-3p in the valence band. The Ti-doped β -Ga2 O3 is easily formed, followed by V, Cr, Sc, Fe, Mn, Co, Ni, Cu, and Zn doping. Some bands change regularly with the increase of atomic number. All systems become degraded semiconductors after doping. All doping will make the β -Ga2 O3 red shift. Among them, the absorption intensity of Cu doping in the visible light range is significantly improved.