Regulation of surface kinetics: rapid growth of n-AlGaN with high conductivity for deep-ultraviolet light emitters. Issue 23 (27th May 2022)

• Record Type: Journal Article
• Authors: Wang, Jiaming; Xu, Fujun; Lang, Jing; Fang, Xuzhou; Wang, Liubing; Guo, Xueqi; Ji, Chen; Kang, Xiangning; Qin, Zhixin; Yang, Xuelin; Wang, Xinqiang; Ge, Weikun; Shen, Bo
• Is Part Of: CrystEngComm. Volume 24:Issue 23(2022)
• Page Start: 4251
• Page End: 4255
• Publication Date: 2022-05-27
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/d2ce00362g
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : Surface kinetics in Al-rich AlGaN growth are regulated to realize a growth window allowing a higher rate as well as a lower temperature. Hence a rate of 2.3 μm h −1 at 1050 °C is achieved for n-Al0.55 Ga0.45 N with the typical step-terrace morphology. Abstract : A rapid growth strategy for n-AlGaN with fine electrical properties has been put forward aiming at deep-ultraviolet light emitters. By shortening the terrace width using sapphire with large miscut angles, a growth window allowing a higher rate as well as a lower temperature is realized for Al-rich AlGaN, which is beneficial for the control of surface morphology and compensation defects in n-AlGaN. Specifically, a rate of 2.3 μm h −1 for n-Al0.55 Ga0.45 N is achieved at 1050 °C on sapphire with a miscut angle of 0.5°, where the typical step-terrace morphology demonstrates the step-flow growth of n-Al0.55 Ga0.45 N. In addition, impressive electrical properties of n-Al0.55 Ga0.45 N are obtained at the appropriate low growth temperature (1050 °C), with the electron concentration and conductivity being 1.34 × 10 19 cm −3 and 102.8 S cm −1, respectively. As such, a 280 nm deep-ultraviolet light-emitting diode structure, containing 1.5 μm-thick n-Al0.55 Ga0.45 N, is accomplished within 3.5 h, which meanwhile exhibits an obvious reduction of the operating voltage in the flip-chip configuration of devices.