Low‐temperature elevated‐metal metal‐oxide thin‐film transistors and circuit building blocks on a flexible substrate. Issue 6 (20th January 2022)

• Record Type: Journal Article
• Authors: Shi, Runxiao; Wang, Sisi; Xia, Zhihe; Wong, Man
• Is Part Of: Journal of the Society for Information Display. Volume 30:Issue 6(2022)
• Page Start: 505
• Page End: 513
• Publication Date: 2022-01-20
• Subjects: depletion -- enhancement -- flexible electronic circuit -- metal‐oxide semiconductor -- thin‐film transistor; Information display systems -- Periodicals; 621.38154205
• DOI: 10.1002/jsid.1093
• Languages: English
• ISSNs: 1071-0922

Abstract

Abstract: A low‐temperature (300°C) thin‐film transistor (TFT) technology based on the elevated‐metal metal‐oxide device architecture has been developed and deployed for realizing basic circuit building blocks on a polyimide (PI) flexible substrate. Both digital and analog circuit blocks have been simulated, fabricated, and characterized. Exhibiting insignificant impact on the performance of the TFTs, a 308‐nm excimer laser was used to lift‐off the PI from its glass‐carrier substrate. Based on a multi‐"threshold voltage" technology allowing both depletion‐ and enhancement‐mode TFTs, alternative area‐saving, ratio‐less building blocks have been designed and simulated. The required tuning of the threshold voltage could be accomplished by selective fluorination, laser annealing, incorporation of multiple semiconducting metal oxides, or deployment of a dual‐gate architecture. Abstract : A low‐temperature thin‐film transistor technology based on the elevated‐metal metal‐oxide architecture has been developed and deployed for realizing basic circuit building blocks on a polyimide flexible substrate. A multi‐"threshold voltage" technology was also applied to realize area‐saving, ratio‐less building blocks.